Chengdu, China

Rongyao Ma

USPTO Granted Patents = 8 

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2014-2016

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8 patents (USPTO):Explore Patents

Title: Rongyao Ma: Innovator in Semiconductor Technology

Introduction

Rongyao Ma is a prominent inventor based in Chengdu, China, known for his significant contributions to semiconductor technology. With a total of eight patents to his name, he has made remarkable advancements in the field of field effect transistors and ESD protection structures.

Latest Patents

Among his latest patents is a field effect transistor (FET) that includes a termination structure and an associated method for manufacturing. This innovative termination structure comprises a series of termination cells arranged in parallel, featuring a termination trench lined with an insulation layer and filled with conductive spacers. Another notable patent involves a semiconductor device with an ESD protection structure, which is designed to enhance the reliability of semiconductor devices by providing effective protection against electrostatic discharge.

Career Highlights

Rongyao Ma has worked with notable companies such as Chengdu Monolithic Power Systems Co., Ltd. and Chengdu Monolithic Power Systems, Inc. His work in these organizations has allowed him to develop and refine his inventions, contributing to advancements in semiconductor technology.

Collaborations

Rongyao Ma has collaborated with esteemed colleagues, including Tiesheng Li and Lei Zhang, who have played a role in his innovative projects and research endeavors.

Conclusion

Rongyao Ma's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His work continues to influence advancements in the industry, showcasing the importance of innovation in technology.

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