The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
May. 29, 2014
Chengdu Monolithic Power Systems Co., Ltd., Chengdu, CN;
Chengdu Monolithic Power Systems Co., Ltd., Chengdu, CN;
Abstract
A field effect transistor ('FET'), a termination structure and associated method for manufacturing. The FET has a plurality of active transistor cells and a termination structure. The termination structure for the FET includes a plurality of termination cells arranged substantially in parallel from an inner side toward an outer side of a termination area of the FET. Each of the termination cells comprises a termination trench lined with a termination insulation layer and filled with a termination conduction layer. The innermost termination cell is electrically coupled to gate regions of the active transistor cells while the rest of the termination cells are electrically floating.