The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Mar. 01, 2013
Applicant:
Chengdu Monolithic Power Systems Co., Ltd., Chengdu, CN;
Inventors:
Rongyao Ma, Chengdu, CN;
Tiesheng Li, San Jose, CA (US);
Donald Disney, Cupertino, CA (US);
Lei Zhang, Chengdu, CN;
Assignee:
Chengdu Monolithic Power Systems Co., Ltd., Chengdu, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0634 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/0696 (2013.01); H01L 29/42368 (2013.01);
Abstract
A semiconductor device with a substrate, an epitaxy layer formed on the substrate, a plurality of deep wells formed in the epitaxy layer, a plurality of trench gate MOSFET units each of which is formed in top of the epitaxy layer between two adjacent deep well, wherein a trench gate of the trench gate MOSFET unit is shallower than half of the distance between two adjacent deep wells, which may reduce the product of on-state resistance and the gate charge of the semiconductor device.