The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
May. 02, 2012
Lei Zhang, Chengdu, CN;
Donald Ray Disney, Cupertino, CA (US);
Tiesheng LI, San Jose, CA (US);
Rongyao MA, Chengdu, CN;
Lei Zhang, Chengdu, CN;
Donald Ray Disney, Cupertino, CA (US);
Tiesheng Li, San Jose, CA (US);
Rongyao Ma, Chengdu, CN;
Chengdu Monolithic Power Systems Co., Ltd., Chengdu, CN;
Abstract
The embodiments of the present disclosure disclose a trench-gate MOSFET device and the method for making the trench-gate MOSFET device. The trench-gate MOSFET device comprises a curving dopant profile formed between the body region and the epitaxial layer so that the portion of the body region under the source metal contact has a smaller vertical thickness than the other portion of the body region. The trench-gate MOSFET device in accordance with the embodiments of the present disclosure has improved UIS capability compared with the traditional trench-gate MOSFET device.