Shorewood, MN, United States of America

Romney R Katti

This inventor holds 85 USPTO granted patents and 1 published patent application and 5 EPO patents, primarily in Magneto Resistive Memory (CPC class G11C11-1675). Top assignees: Honeywell International Inc., Micron Technology Incorporated, California Institute of Technology. Active years: 1992-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Romney R Katti. Retrieved from https://idiyas.com/inventor/romney-r-katti

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 85 

% Patents Active = 80.0

 

Average Co-Inventor Count = 1.5

ph-index = 13

Forward Citations = 1,068(Granted Patents)

Forward Citations (Not Self Cited) = 1,027(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Pasadena, CA (US) (1992 - 1995)
  • N. Maple Grove, MN (US) (2004 - 2007)
  • Shorewood, IL (US) (2008)
  • Hennepin, MN (US) (2008 - 2011)
  • Maple Grove, MN (US) (2001 - 2013)
  • Shorewood, MN (US) (2007 - 2024)

Company Filing History:


Years Active: 1992-2026

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Areas of Expertise:
Magneto Resistive Memory
Magnetic Shielding
Spintronic Accelerometers
Magnetic Tunnel Junction
Memory Cell
Magnetic Field Sensing
Spintronic Devices
Tamper-Resistant MRAM
Shock Sensors
Magnetic Logic Gate
Integrated Circuits
Vibration Sensors
85 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Romney R Katti

Introduction

Romney R Katti, based in Shorewood, MN, is a prolific inventor known for his remarkable contributions to technology and memory devices. With an impressive portfolio of 82 patents, Katti has significantly influenced the field of magnetic tunnel junctions and memory technologies.

Latest Patents

Two of Katti's latest patents illustrate his innovative prowess. The first is titled "Magneto-resistive random access memory magnetic tunnel junction and cell with voltage-controlled writing." This invention describes a memory device incorporating a magnetic tunnel junction (MTJ) element with a unique free layer structure and processing circuitry that enhances writing efficiency by utilizing electric fields to modulate magnetic anisotropy. This advancement allows for reduced write currents during operations.

Additionally, Katti's patent for an "Accelerometer using magnetic tunnel junction" showcases an MTJ-based sensor device that accurately determines acceleration through specialized reservoirs and advanced processing circuitry. This technology emphasizes the integration of MTJ elements, ensuring high precision in detecting motion.

Career Highlights

Throughout his career, Katti has made significant strides in the tech industry. He has held positions at notable companies such as Honeywell International Inc. and Micron Technology Incorporated. His work in these companies has paved the way for advancements in sensor technology and memory solutions, enhancing the performance and reliability of various electronic devices.

Collaborations

Collaboration has been a key element in Katti’s career, working alongside eminent colleagues like Theodore Zhu and Yong Lu. Together, they have contributed to significant developments in memory technologies and have shared insights that have led to groundbreaking inventions in the field.

Conclusion

Romney R Katti stands out as an innovative mind in the realm of technology and memory devices. His extensive patent portfolio and collaborations mirror a commitment to advancing the industry. As technology continues to evolve, inventions such as Katti's play a crucial role in shaping the future of memory solutions and sensor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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