Honeywell International Inc.

Micron Technology Incorporated

California Institute of Technology

The United States of America As Represented by the Administrator of the

Romney R Katti

Yong Lu

Theodore Zhu

James L Tucker

Jiin-Chuan Wu

Henry L Stadler

Lonny L Berg

Daniel Seymour Reed

Joel A Drewes

Richard K Spielberger

Timothy J Vogt

Anuj Kohli

Shaoping Li

Anthony Arrott

William L Larson

Harry Liu

Gordon Alan Shaw

Owen J Hynes

Brent R Blaes

Daniel Baseman

Michael A Smith

Wei D Z Zou

Paul S Fechner

Michael S Liu

Harry H L Liu

Roy R Wang

Hassan Kaakani

Bryan C Westberg

David W Zou

Edward F Ambrose

An example device includes a magnetic device, a first magnetic shielding, and a second magnetic shielding. The magnetic device is configured to determine a perpendicular magnetization that extends along a z-axis. The first magnetic shielding comprises a first magnetic material, the first magnetic shielding extending at least partially between a first surface of the magnetic device and a second surface of the magnetic device in the z-axis. The first surface is on an opposite side of the magnetic device from the second surface of the magnetic device. The second magnetic shielding comprises a second magnetic material, the second magnetic shielding extending at least partially between a third surface of the magnetic device and a fourth surface of the magnetic device in an x-axis. The fourth surface is on an opposite side of the magnetic device from the third surface of the magnetic device.

Magnetic shielding for magnetic devices

An example apparatus includes a single die, the single die including a first set of one or more magnetic tunnel junction (MTJ) elements comprising a first anisotropy that results in the first set of one or more magnetic tunnel junction elements being configured to perform a write operation at a first write speed. The single die further includes a second set of one or more MTJ elements comprising a second anisotropy that results in the second set of one or more MTJ elements being configured to perform a write operation at a second write speed different from the first write speed. The single die further includes processing circuitry configured to cache data at the first set of one or more MTJ elements for short-term storage and to store data at the second set of one or more MTJ elements for long-term storage.

Magneto resistive memory for monolithic data processing

A memory device has a magnetic tunnel junction (MTJ) element that includes a free layer structure, a free/pinned layer structure, and a tunnel barrier structure between the free layer structure and the free/pinned layer structure. A first electrode is coupled to the free layer structure, and a second electrode is coupled to the free/pinned layer structure. Processing circuitry is operatively coupled to the MTJ element. The processing circuitry is configured to apply a voltage to the MTJ element to modulate magnetic anisotropy using an electric field, to enable writing with reduced write currents; issue a charge current to the MTJ element to induce spin-dependent writing and magnetic spin accumulation in the free layer structure to set a bit state of the MTJ element, using spin-transfer torque into the free layer structure; and remove the voltage from the MTJ element that modulates the magnetic anisotropy, to perform a write operation.

Magneto-resistive random access memory magnetic tunnel junction and cell with voltage-controlled writing

A magnetic tunnel junction (MTJ) based sensor device includes a first MTJ element, a first reservoir, a second MTJ element, a second reservoir, and processing circuitry. The first reservoir includes first particles configured to move within the first reservoir during acceleration. A first portion of the first reservoir is electrically coupled to a free layer of the first MTJ element. The second reservoir includes second particles configured to move within the second reservoir during acceleration. A first portion of the second reservoir is electrically coupled to a free layer of the second MTJ element. The processing circuitry is configured to determine an acceleration based on a first output voltage at a pinned layer at the first MTJ element and a second output voltage at a pinned layer at the second MTJ element.

Accelerometer using magnetic tunnel junction

An example device for detecting acceleration using a spintronic Hall effect includes a spin Hall effect structure, a Magnetic Tunnel Junction (MTJ) element, a magnetic structure, and processing circuitry. The MTJ element includes a free structure, a pinned structure, and a tunnel barrier arranged between the free structure and the pinned structure. The magnetic structure is spaced apart from the spin Hall effect structure such that a magnetic field generated by the magnetic structure is moved relative to the spin Hall effect structure during acceleration. The processing circuitry is configured to generate electrical current through the spin Hall effect structure, measure a resistance at the MTJ element, and determine acceleration based on the resistance at the MTJ element.

Magnetic spin hall effect spintronic accelerometer

A magnetic tunnel junction (MTJ) based sensor device includes a MTJ element and processing circuitry. The MTJ element includes a free layer, a pinned layer, and a tunnel barrier, the tunnel barrier being arranged above the pinned layer, wherein the free layer is adapted to flex away from the tunnel barrier during gyroscopic motion. The processing circuitry is configured to measure a resistance at the MTJ element and determine gyroscopic motion based on the resistance at the MTJ element.

Spintronic gyroscopic sensor device

A magnetic tunnel junction (MTJ) based sensor device includes a MTJ element and processing circuitry. The MTJ element includes a free layer, a pinned layer, an elastic layer, and a tunnel barrier. The free layer is spaced apart from the pinned layer by the tunnel barrier and the elastic layer. The processing circuitry is configured to measure a resistance at the MTJ element and determine whether mechanical shock and vibration has occurred based on the resistance at the MTJ element.

Spintronic mechanical shock and vibration sensor device

A magnetic tunnel junction (MTJ) based sensor device includes a MTJ element and processing circuitry. The MTJ element includes a free layer, a pinned layer, and a tunnel barrier, the tunnel barrier being arranged between the free layer and the pinned layer. The free layer is adapted to flex away from the tunnel barrier during acceleration. The processing circuitry is configured to measure a resistance at the MTJ element and determine acceleration based on the resistance at the MTJ element.

Spintronic accelerometer

An example device for performing a write operation, the device including a Magnetic Tunnel Junction (MTJ) element and processing circuitry. The MTJ element including a free structure, a pinned structure, and a tunnel barrier arranged between the free structure and the pinned structure. The processing circuitry is configured to receive an instruction to set the MTJ element to a low-resistance state and provide a write voltage to the MTJ element such that the tunnel barrier breaks down to generate a low-resistance channel between the free structure and the pinned structure.

Magnetic tunnel junction based programmable memory cell

An example device for performing a write operation using a spintronic Hall effect includes a Spin Hall Effect (SHE) structure, a Magnetic Tunnel Junction (MTJ) element, and processing circuitry. The MTJ element includes a free structure, a pinned structure, and a tunnel barrier arranged between the free structure and the pinned structure. The free structure comprises a plurality of free layers. The free structure is arranged with the SHE structure such that current in the SHE structure induces spin transfer into the free structure. The processing circuitry is configured to receive an instruction to set the MTJ element to a target state of a plurality of states and in response to receiving the instruction, generate electrical current through the spin Hall effect structure to modify a resistance of the MTJ element to correspond to the target state.

Magneto-resistive random access memory cell with spin-dependent diffusion and state transfer

A circuit package for electrically connecting a plurality of modules. The circuit package having a first and second mounting plate, each including a plurality of module connectors configured to receive and form electrical connections with the plurality of modules. The circuit package also having a first and second sidewall mounted to the first and second mounting plates. The first sidewall including a plurality of sidewall fins extending outward from the first sidewall so that the plurality of sidewall fins are positioned between the first and second mounting plates and at least partially interleave with the plurality of modules.

Circuit packages including modules that include at least one integrated circuit

System and methods for magnetic Tunnel Junction pressure sensors are provided. In at least one implementation, a pressure sensor device comprises a magnetic tunnel junction comprising a free layer structure, a tunnel barrier, and a reference layer structure, wherein one or more surfaces of the free layer structure is exposed to respond to a pressure medium; and a voltage source coupled to the magnetic tunnel junction, the voltage source providing electrical power to the free layer structure and the reference layer structure. The device further comprises a current detector coupled between the magnetic tunnel junction and the voltage source; and a pressure calculating device, configured to calculate a pressure based on a current detected by the current detector.

System and methods for magnetic tunnel junction pressure sensors

A magnetic tunnel junction based memory device comprising a magnetic tunnel junction element and writing circuitry. The magnetic tunnel junction element includes a free layer, a pinned layer, and a tunnel barrier. The free layer is spaced apart along a vertical direction from the pinned layer by the tunnel barrier. The writing circuitry is configured to receive an instruction to set the magnetic tunnel junction element to a target state of three of more states of the magnetic tunnel junction element and provide electrical current to modify a position of a domain wall of the free layer along both a first horizontal direction and a second horizontal direction to correspond to the target state.

Magnetic tunnel junction based memory device

A magnetoresistive random access memory (MRAM) die may include a plurality of MRAM cells, and a magnetic field sensing structure. The magnetic field sensing structure may include a movable portion and a magnetic material attached to the movable portion. The movable portion may move in response to exposure of the magnetic material to an external magnetic field.

Magnetoresistive random access memory (MRAM) die including a magnetic field sensing structure

A stacked integrated circuit (IC) system including a substrate, a contour support, and a first and second IC dies. The contour support including a first support frame attached to the substrate defining a first lateral contact surface substantially orthogonal to the substrate, a support plate on the first support frame substantially parallel to the substrate, and a second support frame on the support plate defining a second lateral contact surface substantially orthogonal to the substrate, with the first and second lateral contact surfaces laterally offset from each other. The first integrated circuit die with a side abutting the first lateral contact surface, the second integrated circuit die with a side abutting the second lateral contact surface such that at least a portion of the support plate is between the first and second integrated circuit dies.

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Shorewood, MN, United States of America

Romney R Katti