The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Oct. 27, 2017
Applicant:

Honeywell International Inc., Morris Plains, NJ (US);

Inventor:

Romney R. Katti, Shorewood, MN (US);

Assignee:

Honeywell International Inc., Morris Plains, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G01R 33/09 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G01R 33/093 (2013.01); G11C 11/1675 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic tunnel junction based memory device comprising a magnetic tunnel junction element and writing circuitry. The magnetic tunnel junction element includes a free layer, a pinned layer, and a tunnel barrier. The free layer is spaced apart along a vertical direction from the pinned layer by the tunnel barrier. The writing circuitry is configured to receive an instruction to set the magnetic tunnel junction element to a target state of three of more states of the magnetic tunnel junction element and provide electrical current to modify a position of a domain wall of the free layer along both a first horizontal direction and a second horizontal direction to correspond to the target state.


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