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For the Inventor, By the Inventor

Goleta, CA, United States of America

Robert M Farrell

USPTO Granted Patents = 17 

 

Average Co-Inventor Count = 7.2

ph-index = 3

Forward Citations = 38(Granted Patents)


Company Filing History:

goldMedal17 out of 15,458 
 
University of California
 patents
silverMedal6 out of 1,309 
 
Japan Science and Technology Agency
 patents
where one patent can have more than one assignee

Years Active: 2009-2023

where 'Filed Patents' based on already Granted Patents

17 patents (USPTO):
1. 11552452 - Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction (2023-01-10),
2. 11411137 - III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers (2022-08-09),
3. 10529892 - Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices (2020-01-07),
4. 10186835 - Monolithic integration of optically pumped III-nitride devices (2019-01-22),
5. 9917422 - Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction (2018-03-13),
6. 9793435 - Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices (2017-10-17),
7. 9356431 - High power blue-violet III-nitride semipolar laser diodes (2016-05-31),
8. 9231376 - Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices (2016-01-05),
9. 9077151 - Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction (2015-07-07),
10. 9040327 - Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes (2015-05-26),
11. 8795430 - Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates (2014-08-05),
12. 8686466 - Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices (2014-04-01),
13. 8588260 - Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers (2013-11-19),
14. 8211723 - Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes (2012-07-03),
15. 7846757 - Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices (2010-12-07),

Title: The Innovative Mind of Robert M Farrell: Pioneering Optoelectronic Devices

Introduction:

Robert M Farrell is a distinguished inventor hailing from Goleta, CA (US), with a remarkable track record in the field of optoelectronic devices. With 23 patents to his name, Farrell has cemented his reputation as a visionary in the realm of semiconductor technology.

Latest Patents:

Among his latest patents is the groundbreaking development of Semi-polar III-nitride optoelectronic devices on m-plane substrates with precise miscuts in the c-direction. This technology represents a significant advancement in the optimization of GaN crystal planes for enhanced device performance. Additionally, Farrell's work on III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide showcases his expertise in pushing the boundaries of optical and electrical integration in semiconductor devices.

Career Highlights:

Having contributed significantly to the field of optoelectronics, Robert M Farrell has been associated with esteemed institutions such as the University of California and the Japan Science and Technology Agency. His innovative research and patent portfolio have not only advanced scientific knowledge but also paved the way for practical applications in the industry.

Collaborations:

Throughout his career, Farrell has collaborated with renowned experts in the field, including luminaries such as Shuji Nakamura and Steven P DenBaars. These partnerships have been instrumental in driving forward the frontiers of optoelectronic technology and fostering a culture of innovation and excellence.

Conclusion:

In conclusion, Robert M Farrell stands as a beacon of innovation in the realm of optoelectronic devices, with his pioneering work reshaping the landscape of semiconductor technology. His contributions continue to inspire and spark new avenues for research and development in the field.

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