The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jun. 13, 2012
Daniel F. Feezell, Santa Barbara, CA (US);
Mathew C. Schmidt, Santa Barbara, CA (US);
Kwang-choong Kim, Seoul, KR;
Robert M. Farrell, Goleta, CA (US);
Daniel A. Cohen, Santa Barbara, CA (US);
James S. Speck, Goleta, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Daniel F. Feezell, Santa Barbara, CA (US);
Mathew C. Schmidt, Santa Barbara, CA (US);
Kwang-Choong Kim, Seoul, KR;
Robert M. Farrell, Goleta, CA (US);
Daniel A. Cohen, Santa Barbara, CA (US);
James S. Speck, Goleta, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method for fabricating AlGaN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.