Daniel F Feezell

USPTO Granted Patents = 44 (Patent Applications = 4)

Average Co-Inventor Count = 4.3

ph-index = 12

Forward Citations = 1,270(Granted Patents)

Location History:

Santa Barbara, CA (US) (2009 - 2015)
Goleta, CA (US) (2012 - 2017)
Fremont, CA (US) (2013 - 2018)
Freemont, CA (US) (2019)
Albuquerque, NM (US) (2014 - 2023)

Company Filing History:

12 out of 15,458

University of California

Soraa Laser Diode, Inc.

Unm Rainforest Innovations

patents

6. 1 out of 1,309

Japan Science and Technology Agency

patents

7. 10 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 2009-2023

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44 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11715635 - Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching (2023-08-01),

2. 11652188 - Method of fabricating broad-band lattice-matched omnidirectional distributed Bragg reflectors using random nanoporous structures (2023-05-16),

3. 11456370 - Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal (2022-09-27),

4. 11374106 - Method of making heteroepitaxial structures and device formed by the method (2022-06-28),

5. 11349011 - Method of making heteroepitaxial structures and device formed by the method (2022-05-31),

6. 11342442 - Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal (2022-05-24),

7. 11342441 - Method of forming a seed area and growing a heteroepitaxial layer on the seed area (2022-05-24),

8. 11342438 - Device with heteroepitaxial structure made using a growth mask (2022-05-24),

9. 11177126 - Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching (2021-11-16),

10. 11002758 - Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips (2021-05-11),

11. 10840092 - Atomic force microscopy based on nanowire tips for high aspect ratio nanoscale metrology/confocal microscopy (2020-11-17),

12. RE47241 - Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors (2019-02-11),

13. 10141418 - Device with heteroepitaxial structure made using a growth mask (2018-11-27),

14. 10043946 - Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening (2018-08-07),

15. 9773704 - Method for the reuse of gallium nitride epitaxial substrates (2017-09-26),

Title: Inventor Daniel F Feezell - Innovating in Goleta, CA

Introduction: Daniel F Feezell is a renowned inventor based in Goleta, California. With a passion for innovation and a drive to create cutting-edge technologies, Feezell has made significant contributions to various fields.

Latest Patents: Feezell holds several patents in the areas of semiconductor devices, optoelectronics, and solid-state lighting. His recent patents showcase his expertise in developing efficient and high-performance electronic devices.

Career Highlights: Throughout his career, Feezell has worked with leading research institutions and technology companies to bring his inventions to life. His innovative solutions have been instrumental in advancing the semiconductor industry.

Collaborations: Feezell has collaborated with top engineers, scientists, and researchers to push the boundaries of technology. His partnerships have led to groundbreaking discoveries and have paved the way for future advancements in the field.

Conclusion: Daniel F Feezell's dedication to innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His work continues to inspire and shape the future of technology.

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4 patents pending:

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