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For the Inventor, By the Inventor

Goleta, CA, United States of America

Daniel F Feezell

This inventor holds 47 USPTO granted patents and 17 published patent applications, primarily in Heteroepitaxy Technology. Top assignees: University of California, Soraa, Inc., The University of New Mexico. Active years: 2009-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel F Feezell. Retrieved from https://idiyas.com/inventor/daniel-f-feezell

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 47 

% Patents Active = 85.1

Average Co-Inventor Count = 4.3

ph-index = 12

Forward Citations = 1,290(Granted Patents)


Location History:

  • Santa Barbara, CA (US) (2009 - 2015)
  • Goleta, CA (US) (2012 - 2017)
  • Fremont, CA (US) (2013 - 2018)
  • Freemont, CA (US) (2019)
  • Albuquerque, NM (US) (2014 - 2024)

Company Filing History:

goldMedal12 out of 16,025 
 
University of California
 patents
silverMedal11 out of 204 
 
Soraa, Inc.
 patents
bronzeMedal7 out of 943 
 
The University of New Mexico
 patents
4. 6 out of 165 
 
Soraa Laser Diode, Inc.
 patents
5. 1 out of 1,328 
 
Japan Science and Technology Agency
 patents
6. 10 out of 834,513 
Other
 patents

Years Active: 2009-2025

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Areas of Expertise:
Heteroepitaxy
Gallium Nitride
Light Extraction
Laser Diodes
Optical Devices
Scanning Tunneling Microscopy
Nanostructured Pedestals
Broad-Band Reflectors
Volumetric LEDs
Semiconductor Structures
Dry Etch Damage
Nanoscale Metrology
47 patents (USPTO):Explore Patents
1. 12308615 - Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg reflector mirrors (2025-05-20),
2. 12255265 - Devices comprising distributed bragg reflectors and methods of making the devices (2025-03-18),
3. 12078654 - Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips (2024-09-03),
4. 11715635 - Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching (2023-08-01),
5. 11652188 - Method of fabricating broad-band lattice-matched omnidirectional distributed Bragg reflectors using random nanoporous structures (2023-05-16),
6. 11456370 - Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal (2022-09-27),
7. 11374106 - Method of making heteroepitaxial structures and device formed by the method (2022-06-28),
8. 11349011 - Method of making heteroepitaxial structures and device formed by the method (2022-05-31),
9. 11342442 - Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal (2022-05-24),
10. 11342441 - Method of forming a seed area and growing a heteroepitaxial layer on the seed area (2022-05-24),
11. 11342438 - Device with heteroepitaxial structure made using a growth mask (2022-05-24),
12. 11177126 - Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching (2021-11-16),
13. 11002758 - Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips (2021-05-11),
14. 10840092 - Atomic force microscopy based on nanowire tips for high aspect ratio nanoscale metrology/confocal microscopy (2020-11-17),
15. RE47241 - Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors (2019-02-11),

Title: Inventor Daniel F Feezell - Innovating in Goleta, CA

Introduction: Daniel F Feezell is a renowned inventor based in Goleta, California. With a passion for innovation and a drive to create cutting-edge technologies, Feezell has made significant contributions to various fields.

Latest Patents: Feezell holds several patents in the areas of semiconductor devices, optoelectronics, and solid-state lighting. His recent patents showcase his expertise in developing efficient and high-performance electronic devices.

Career Highlights: Throughout his career, Feezell has worked with leading research institutions and technology companies to bring his inventions to life. His innovative solutions have been instrumental in advancing the semiconductor industry.

Collaborations: Feezell has collaborated with top engineers, scientists, and researchers to push the boundaries of technology. His partnerships have led to groundbreaking discoveries and have paved the way for future advancements in the field.

Conclusion: Daniel F Feezell's dedication to innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His work continues to inspire and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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