IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11456370 B1

PDFFull Text
Date of Patent:
Sep. 27, 2022

Filed:

Jan. 21, 2020

Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal

Applicant:

Unm Rainforest Innovations, Albuquerque, NM (US);

Inventors:

Steven R. J. Brueck, Albuquerque, NM (US);

Stephen D. Hersee, Albuquerque, NM (US);

Seung-Chang Lee, Albuquerque, NM (US);

Daniel Feezell, Albuquerque, NM (US);

Assignee:

UNM RAINFOREST INNOVATIONS, Albuquerque, NM (US);

Attorney:

MH2 Technology Law Group LLP

Primary Examiner:

Peter Bradford

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); B82Y 40/00 (2011.01); H01L 29/778 (2006.01); B82Y 10/00 (2011.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/02107 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02538 (2013.01); H01L 21/02639 (2013.01); H01L 29/04 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/16 (2013.01); H01L 29/20 (2013.01); H01L 29/66469 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/7783 (2013.01); H01L 29/785 (2013.01); H01L 29/7827 (2013.01); H01L 29/7851 (2013.01); H01L 27/1211 (2013.01); H01L 29/045 (2013.01);
Abstract

A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Find Patent Forward Citations

Loading…