The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Feb. 25, 2021
Applicant:
Unm Rainforest Innovations, Albuquerque, NM (US);
Inventors:
Daniel F. Feezell, Albuquerque, NM (US);
Morteza Monavarian, Albuquerque, NM (US);
Saadat M. Mishkat-Ul-Masabih, Albuquerque, NM (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/02 (2006.01); H01S 5/024 (2006.01); H01S 5/042 (2006.01); H01S 5/227 (2006.01); H01S 5/32 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18363 (2013.01); H01S 5/0206 (2013.01); H01S 5/02469 (2013.01); H01S 5/042 (2013.01); H01S 5/18308 (2013.01); H01S 5/18347 (2013.01); H01S 5/18355 (2013.01); H01S 5/18361 (2013.01); H01S 5/18369 (2013.01); H01S 5/2275 (2013.01); H01S 5/32025 (2019.08); H01S 5/34333 (2013.01);
Abstract
An electrically injected vertical-cavity surface emitting laser (VCSEL) and a method of manufacturing the same is disclosed. The electrically injected VCSEL includes a non-c-plane substrate and a nanoporous bottom distributed Bragg reflector (DBR) comprising a plurality of alternating highly doped III-nitride layers and unintentionally doped III-nitride layers formed above the substrate.