The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Oct. 28, 2020
Applicant:

Unm Rainforest Innovations, Albuquerque, NM (US);

Inventors:

Morteza Monavarian, Albuquerque, NM (US);

Daniel Feezell, Albuquerque, NM (US);

Behnam Abaie, Albuquerque, NM (US);

Arash Mafi, Albuquerque, NM (US);

Saadat Mishkat-Ul-Masabih, Albuquerque, NM (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01S 5/183 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/46 (2010.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 33/46 (2013.01); H01S 5/04253 (2019.08); H01S 5/18361 (2013.01);
Abstract

A method of forming and a random Distributed Bragg Reflector (DBR) is disclosed. The random DBR includes a substrate and a plurality of alternating layers of lattice-matched nanoporous GaN (NP-GaN) and GaN formed on a top surface of the substrate, wherein at least one of the alternating layers has a thickness of λ/4n and an adjacent one of the alternating layers does not have a thickness of λ/4n, wherein λ is a wavelength of incident radiation and n is the refractive index of a particular layer of the plurality of alternating layers.


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