The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Nov. 12, 2021
Unm Rainforest Innovations, Albuquerque, NM (US);
Morteza Monavarian, Albuquerque, NM (US);
Daniel Feezell, Albuquerque, NM (US);
Andrew Aragon, Albuquerque, NM (US);
Saadat Mishkat-Ul-Masabih, Albuquerque, NM (US);
Andrew Allerman, Tijeras, NM (US);
Andrew Armstrong, Albuquerque, NM (US);
Mary Crawford, Albuquerque, NM (US);
Other;
Abstract
A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.