Albuquerque, NM, United States of America

Andrew A Allerman


Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 318(Granted Patents)


Location History:

  • Albuquerque, NM (US) (1999 - 2002)
  • Tijeras, NM (US) (2011 - 2023)

Company Filing History:


Years Active: 1999-2025

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19 patents (USPTO):Explore Patents

Title: Andrew A Allerman: Innovator in Gallium Nitride Technology

Introduction

Andrew A Allerman, based in Albuquerque, NM, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 19 patents, his work primarily focuses on gallium nitride (GaN) devices, which are vital for high-performance electronic applications.

Latest Patents

One of his latest innovations is the "High Voltage Gallium Nitride Vertical PN Diode." This vertical GaN PN diode features epitaxial growth of a thick drift region characterized by a low carrier concentration, combined with a meticulously designed multi-zone junction termination extension. This design achieves exceptional high voltage blocking and high-power efficiency. Notably, a large area (1 mm) diode demonstrated a forward pulsed current of 3.5 A, featuring an 8.3 mΩ-cm specific on-resistance, and a remarkable 5.3 kV reverse breakdown. Furthermore, a smaller area diode (0.063 mm) was capable of achieving 6.4 kV breakdown with a specific on-resistance of 10.2 mΩ-cm. This performance accounts for current spreading through the drift region at a 45° angle.

Another noteworthy patent involves the method of removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching. This method addresses the challenge of dry-etch damage to the surface of a substrate comprised of n-type Al/In/GaN semiconductor material. By immersing the substrate in an electrolyte solution and using above bandgap light, the process photoelectrochemically etches the surface, effectively removing at least a portion of the dry-etch damage.

Career Highlights

Andrew has worked at prominent organizations including Sandia Corporation and National Technology & Engineering Solutions of Sandia, LLC. His tenure at these institutions has provided him with a robust platform to innovate and apply his expertise in semiconductor technology.

Collaborations

Throughout his career, Andrew has collaborated with notable colleagues such as Mary H Crawford and Andrew Armstrong. These collaborations have likely enriched his research initiatives and contributed to the successful development of his patented technologies.

Conclusion

Andrew A Allerman stands out as a pivotal inventor in the realm of gallium nitride technology, showcasing a blend of innovation and practical application through his patents. His strategic collaborations and career advancements continue to drive his impact on the semiconductor industry.

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