The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

May. 27, 2016
Applicant:

National Technology & Engineering Solutions of Sandia Llc, Albuquerque, NM (US);

Inventors:

Jeramy Ray Dickerson, Albuquerque, NM (US);

Jonathan Wierer, Jr., Coopersburg, PA (US);

Robert Kaplar, Albuquerque, NM (US);

Andrew A. Allerman, Tijeras, NM (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/866 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0615 (2013.01); H01L 21/2654 (2013.01); H01L 29/2003 (2013.01); H01L 29/66113 (2013.01); H01L 29/866 (2013.01);
Abstract

A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.


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