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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9368677 B1

PDFFull Text
Date of Patent:
Jun. 14, 2016

Filed:

Nov. 13, 2014

Selective layer disordering in iii-nitrides with a capping layer

Applicant:

Sandia Corporation, Albuquerque, NM (US);

Inventors:

Jonathan J. Wierer, Jr., Albuquerque, NM (US);

Andrew A. Allerman, Tijeras, NM (US);

Assignee:

Sandia Corporation, Albuquerque, NM (US);

Attorney:

Kevin W. Bieg

Primary Examiner:

Moazzam Hossain

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/04 (2006.01); H01L 33/06 (2010.01); H01L 31/18 (2006.01); H01S 5/343 (2006.01); H01L 33/00 (2010.01); H01L 31/0352 (2006.01); H01L 21/02 (2006.01); H01L 21/44 (2006.01); H01L 21/324 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02664 (2013.01); H01L 21/324 (2013.01); H01L 21/44 (2013.01); H01L 31/035236 (2013.01); H01L 31/1856 (2013.01); H01L 33/0066 (2013.01); H01L 33/0075 (2013.01); H01S 5/34333 (2013.01); B82Y 40/00 (2013.01); Y10S 977/89 (2013.01);
Abstract

Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

Find Patent Forward Citations

Wierer, Jr., Jonathan. (2016). Selective layer disordering in iii-nitrides with a capping layer (U.S. Patent No. 9368677). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9368677

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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