The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jan. 10, 2022
National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);
Luke Yates, Albuquerque, NM (US);
Brendan P. Gunning, Albuquerque, NM (US);
Mary H. Crawford, Albuquerque, NM (US);
Jeffrey Steinfeldt, Rio Rancho, NM (US);
Michael L. Smith, Albuquerque, NM (US);
Vincent M. Abate, Albuquerque, NM (US);
Jeramy R. Dickerson, Edgewood, NM (US);
Andrew M. Armstrong, Los Ranchos de Albuquerque, NM (US);
Andrew Binder, Albuquerque, NM (US);
Andrew A. Allerman, Tijeras, NM (US);
Robert J. Kaplar, Albuquerque, NM (US);
Jack David Flicker, Albuquerque, NM (US);
Gregory W. Pickrell, Rio Rancho, NM (US);
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US);
Abstract
A vertical gallium nitride (GaN) PN diode uses epitaxial growth of a thick drift region with a very low carrier concentration and a carefully designed multi-zone junction termination extension to achieve high voltage blocking and high-power efficiency. An exemplary large area (1 mm) diode had a forward pulsed current of 3.5 A, an 8.3 mΩ-cmspecific on-resistance, and a 5.3 kV reverse breakdown. A smaller area diode (0.063 mm) was capable of 6.4 kV breakdown with a specific on-resistance of 10.2 mΩ-cm, when accounting for current spreading through the drift region at a 45° angle.