Company Filing History:
3 out of 1,020 
2 out of 832,843 Years Active: 2019-2025
Title: Innovations by Andrew M Armstrong: A Pioneer in Gallium Nitride Technology
Introduction: Andrew M Armstrong is an accomplished inventor based in Los Ranchos de Albuquerque, New Mexico. With a focus on semiconductor technology, he has made significant contributions to the field through his innovative inventions. His work is characterized by a commitment to enhancing the performance and efficiency of electronic devices.
Latest Patents: Andrew holds a patent for a groundbreaking invention titled "High Voltage Gallium Nitride Vertical PN Diode." This vertical gallium nitride (GaN) PN diode employs an advanced epitaxial growth method to create a thick drift region with a very low carrier concentration. It features a specially designed multi-zone junction termination extension, which allows for high voltage blocking and exceptional power efficiency. The exemplary large area diode (1 mm) exhibits a forward pulsed current of 3.5 A, with an impressive specific on-resistance of 8.3 mΩ-cm and a remarkable 5.3 kV reverse breakdown capability. Furthermore, a smaller area diode (0.063 mm) has demonstrated a breakdown voltage of 6.4 kV and a specific on-resistance of 10.2 mΩ-cm, effectively accounting for current spreading through the drift region at a 45° angle.
Career Highlights: Currently, Andrew M Armstrong is affiliated with National Technology & Engineering Solutions of Sandia, LLC, where he continues to push the boundaries of semiconductor technology. His career has been marked by a dedication to innovation and the pursuit of efficient solutions for advanced electronic applications.
Collaborations: Andrew collaborates with distinguished professionals in his field, including his coworker Brendan P Gunning. This partnership brings together a wealth of expertise and innovative thinking, contributing to the ongoing advancement of their projects and patents.
Conclusion: Andrew M Armstrong's work in the development of high voltage gallium nitride vertical PN diodes stands as a testament to his ingenuity and commitment to technological advancement. His contributions are shaping the future of semiconductor technology, setting a standard for efficiency and performance in the electronics sector.