This inventor holds 1 USPTO granted patent. Top assignee: National Technology & Engineering Solutions of Sandia, LLC. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: Jeramy R Dickerson: Innovator in High Voltage Gallium Nitride Technology
Introduction
Jeramy R Dickerson is a notable inventor based in Edgewood, NM (US). He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on gallium nitride (GaN) devices. His expertise and dedication to advancing technology have led to the development of a unique patent that showcases his skills as an inventor.
Latest Patents
Jeramy holds a patent for a "High voltage gallium nitride vertical PN diode." This invention utilizes epitaxial growth of a thick drift region with a very low carrier concentration. It features a carefully designed multi-zone junction termination extension, which allows for high voltage blocking and high-power efficiency. An exemplary large area diode measuring 1 mm achieved a forward pulsed current of 3.5 A, an 8.3 mΩ-cm specific on-resistance, and a 5.3 kV reverse breakdown. Additionally, a smaller area diode of 0.063 mm was capable of 6.4 kV breakdown with a specific on-resistance of 10.2 mΩ-cm, accounting for current spreading through the drift region at a 45° angle.
Career Highlights
Jeramy is currently employed at National Technology & Engineering Solutions of Sandia, LLC, where he continues to push the boundaries of technology. His work has not only contributed to his personal achievements but has also advanced the capabilities of the organization he represents.
Collaborations
Throughout his career, Jeramy has collaborated with talented individuals such as Luke Yates and Brendan P Gunning. These partnerships have fostered an environment of innovation and creativity, leading to groundbreaking advancements in their respective fields.
Conclusion
Jeramy R Dickerson's contributions to high voltage gallium nitride technology exemplify his commitment to innovation and excellence. His patent and work at National Technology & Engineering Solutions of Sandia, LLC highlight his role as a significant figure in the semiconductor industry.