Brendan P Gunning

Title: Brendan P. Gunning: Innovator in Gallium Nitride Technology

Introduction

Brendan P. Gunning is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of semiconductor technology, particularly through his work on gallium nitride (GaN) devices. His innovative approach has led to advancements in high voltage applications.

Latest Patents

Brendan holds a patent for a "High voltage gallium nitride vertical PN diode." This invention utilizes epitaxial growth of a thick drift region with a very low carrier concentration. It features a carefully designed multi-zone junction termination extension, which allows for high voltage blocking and high-power efficiency. An exemplary large area (1 mm) diode demonstrated a forward pulsed current of 3.5 A, an 8.3 mΩ-cm specific on-resistance, and a 5.3 kV reverse breakdown. Additionally, a smaller area diode (0.063 mm) achieved a breakdown of 6.4 kV with a specific on-resistance of 10.2 mΩ-cm, accounting for current spreading through the drift region at a 45° angle.

Career Highlights

Brendan is currently employed at National Technology & Engineering Solutions of Sandia, LLC. His work at this organization has allowed him to focus on cutting-edge research and development in semiconductor technologies. His contributions have been instrumental in advancing the capabilities of GaN devices.

Collaborations

Brendan has collaborated with notable colleagues, including Luke Yates and Mary H. Crawford. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Brendan P. Gunning is a distinguished inventor whose work in gallium nitride technology has made a significant impact in the field of semiconductors. His innovative patent and contributions to National Technology & Engineering Solutions of Sandia, LLC highlight his commitment to advancing technology.