Company Filing History:
Years Active: 2025
Title: Michael L. Smith: Innovator in High Voltage Gallium Nitride Technology
Introduction
Michael L. Smith is a prominent inventor based in Albuquerque, NM (US). He is known for his significant contributions to the field of semiconductor technology, particularly in the development of high voltage gallium nitride (GaN) devices. His innovative work has led to advancements that enhance power efficiency and voltage blocking capabilities in electronic components.
Latest Patents
Michael L. Smith holds a patent for a high voltage gallium nitride vertical PN diode. This invention utilizes epitaxial growth of a thick drift region with a very low carrier concentration. It features a carefully designed multi-zone junction termination extension, which allows for high voltage blocking and high-power efficiency. An exemplary large area diode measuring 1 mm demonstrated a forward pulsed current of 3.5 A, an 8.3 mΩ-cm specific on-resistance, and a 5.3 kV reverse breakdown. Additionally, a smaller area diode of 0.063 mm was capable of achieving a 6.4 kV breakdown with a specific on-resistance of 10.2 mΩ-cm, accounting for current spreading through the drift region at a 45° angle.
Career Highlights
Michael L. Smith is currently employed at National Technology & Engineering Solutions of Sandia, LLC. His work at this esteemed organization has allowed him to focus on cutting-edge research and development in semiconductor technologies. His contributions have been instrumental in advancing the capabilities of high voltage devices.
Collaborations
Some of Michael's coworkers include Luke Yates and Brendan P. Gunning. Their collaborative efforts contribute to the innovative environment at National Technology & Engineering Solutions of Sandia, LLC.
Conclusion
Michael L. Smith's work in high voltage gallium nitride technology exemplifies the impact of innovation in the semiconductor industry. His patent and contributions continue to pave the way for advancements in electronic components.