This inventor holds 1 USPTO granted patent. Top assignee: National Technology & Engineering Solutions of Sandia, LLC. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: Vincent M Abate: Innovator in High Voltage Gallium Nitride Technology
Introduction
Vincent M Abate is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of high voltage gallium nitride (GaN) devices. His innovative work has implications for various applications in power electronics.
Latest Patents
Vincent holds a patent for a high voltage gallium nitride vertical PN diode. This diode utilizes epitaxial growth of a thick drift region with a very low carrier concentration. It features a carefully designed multi-zone junction termination extension, which allows for high voltage blocking and high-power efficiency. An exemplary large area diode measuring 1 mm achieved a forward pulsed current of 3.5 A, an 8.3 mΩ-cm specific on-resistance, and a 5.3 kV reverse breakdown. Additionally, a smaller area diode of 0.063 mm was capable of 6.4 kV breakdown with a specific on-resistance of 10.2 mΩ-cm, accounting for current spreading through the drift region at a 45° angle.
Career Highlights
Vincent is currently employed at National Technology & Engineering Solutions of Sandia, LLC. His work at this organization has allowed him to focus on advancing semiconductor technologies and contributing to innovative solutions in the field.
Collaborations
Vincent has collaborated with notable colleagues, including Luke Yates and Brendan P Gunning. These partnerships have fostered a collaborative environment that enhances the development of cutting-edge technologies.
Conclusion
Vincent M Abate's contributions to high voltage gallium nitride technology exemplify his innovative spirit and dedication to advancing semiconductor applications. His work continues to influence the field and pave the way for future advancements.