The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Dec. 02, 2015
Applicant:
Sandia Corporation, Albuquerque, NM (US);
Inventors:
Jonathan Wierer, Jr., Coopersburg, PA (US);
Arthur J. Fischer, Sandia Park, NM (US);
Andrew A. Allerman, Tijeras, NM (US);
Assignee:
Sandia Corporation, Albuquerque, NM (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/268 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8613 (2013.01); H01L 21/0254 (2013.01); H01L 21/268 (2013.01); H01L 29/0619 (2013.01); H01L 29/2003 (2013.01); H01L 29/6609 (2013.01);
Abstract
A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.