Location History:
- Tampa, FL (US) (2003)
- Albuquerque, NM (US) (1996 - 2023)
Company Filing History:
7 out of 1,765 
2 out of 832,880 Years Active: 1996-2023
Title: The Innovative Contributions of Mary H Crawford
Introduction
Mary H Crawford is a distinguished inventor based in Tampa, FL (US), known for her significant contributions to the field of semiconductor technology. With a total of 9 patents to her name, she has made remarkable advancements that have impacted various applications in the industry.
Latest Patents
One of her latest patents focuses on a method for removing or preventing dry etch-induced damage in Al/In/GaN films through photoelectrochemical etching. This innovative method involves providing a substrate made of n-type Al/In/GaN semiconductor material. The process begins with dry-etching the surface of the substrate to create a trench, which results in dry-etch damage. Subsequently, the substrate is immersed in an electrolyte solution and illuminated with above bandgap light. This light generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, allowing for the photoelectrochemical etching of the surface to remove a portion of the dry-etch damage.
Career Highlights
Throughout her career, Mary H Crawford has worked with notable organizations, including Sandia Corporation. Her work has been instrumental in advancing semiconductor technologies and addressing challenges related to material integrity.
Collaborations
Mary has collaborated with esteemed colleagues such as Andrew A Allerman and Daniel D Koleske, contributing to a rich exchange of ideas and innovations in her field.
Conclusion
Mary H Crawford's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading inventor. Her innovative methods continue to influence the industry and pave the way for future advancements.