The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Mar. 17, 2011
Mary Crawford, Albuquerque, NM (US);
Daniel Koleske, Albuquerque, NM (US);
Jaehee Cho, Troy, NY (US);
Di Zhu, Troy, NY (US);
Ahmed Noemaun, Troy, NY (US);
Martin F. Schubert, Boise, ID (US);
E. Fred Schubert, Troy, NY (US);
Mary Crawford, Albuquerque, NM (US);
Daniel Koleske, Albuquerque, NM (US);
Jaehee Cho, Troy, NY (US);
Di Zhu, Troy, NY (US);
Ahmed Noemaun, Troy, NY (US);
Martin F. Schubert, Boise, ID (US);
E. Fred Schubert, Troy, NY (US);
Sandia Corporation, Albuquerque, NM (US);
Abstract
Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.