University of California

Soraa, Inc.

Other

Soraa Laser Diode, Inc.

Stc.unm

Japan Science and Technology Agency

Unm Rainforest Innovations

Daniel F Feezell

Shuji Nakamura

Steven Roy Julien Brueck

James W Raring

Rajat Sharma

Steven P DenBaars

Seung-Chang Lee

Mathew C Schmidt

Stephen D Hersee

James Stephen Speck

Casey O Holder

Robert M Farrell

Nicholas J Pfister

Mark Philip D'Evelyn

Rafael Ignacio Aldaz

Yu-Chia Chang

Daniel A Cohen

Thomas M Katona

Eric M Hall

Kwang-Choong Kim

Morteza Monavarian

Saadat Mishkat-Ul-Masabih

Aurelien J F David

Christiane Elsass

Christiane Poblenz

Andrew A Allerman

Mary H Crawford

Hisashi Masui

Nick Pfister

Tito Busani

Mahmoud Behzadirad

Andrew Armstrong

Andrew Aragon

John Neal Randall

Michael Joseph Cich

Joshua B Ballard

Kwang Choong Kim

Arash Mafi

Aurelien David

Ashwin Krishnan Rishinaramangalam

Behnam Abaie

Shinichi Tanaka

Yuji Zhao

Chih-Chien Pan

Stephen P DenBaars

Masahiro Ishida

A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.

Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching

A method of forming and a random Distributed Bragg Reflector (DBR) is disclosed. The random DBR includes a substrate and a plurality of alternating layers of lattice-matched nanoporous GaN (NP-GaN) and GaN formed on a top surface of the substrate, wherein at least one of the alternating layers has a thickness of &#x3bb;/4n and an adjacent one of the alternating layers does not have a thickness of &#x3bb;/4n, wherein &#x3bb; is a wavelength of incident radiation and n is the refractive index of a particular layer of the plurality of alternating layers.

Method of fabricating broad-band lattice-matched omnidirectional distributed Bragg reflectors using random nanoporous structures

A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal

Method of making heteroepitaxial structures and device formed by the method

Device with heteroepitaxial structure made using a growth mask

Method of forming a seed area and growing a heteroepitaxial layer on the seed area

Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips

Nanowires that may be utilized in microscopy, for example atomic force microscopy (AFM), as part of an AFM probe, as well as for other uses, are disclosed. The nanowires may be formed from a Group III nitride such as an epitaxial layer that may be or include gallium nitride, indium nitride, aluminum nitride, and an alloy of these materials. During use of the AFM probe to measure a topography of a test sample surface, the nanowire can activated and caused to lase and emit a light, thereby illuminating the surface with the light. In an implementation, the light can be collected by the AFM probe itself, for example through an optical fiber to which the nanowire is attached.

Atomic force microscopy based on nanowire tips for high aspect ratio nanoscale metrology/confocal microscopy

A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.

Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors

A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening

A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Method for the reuse of gallium nitride epitaxial substrates

Growing community of inventors

Goleta, CA, United States of America

Daniel F Feezell