The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Jan. 26, 2018
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Po Shan Hsu, Arcadia, CA (US);
Kathryn M. Kelchner, Portland, OR (US);
Robert M. Farrell, Goleta, CA (US);
Daniel A. Haeger, Goleta, CA (US);
Hiroaki Ohta, Tokyo, JP;
Anurag Tyagi, San Jose, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
James S. Speck, Santa Barbara, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/343 (2006.01); B82Y 20/00 (2011.01); H01L 21/02 (2006.01); H01S 5/32 (2006.01); H01L 31/0304 (2006.01); H01L 31/036 (2006.01); H01L 31/0735 (2012.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/30 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); B82Y 20/00 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02609 (2013.01); H01L 31/036 (2013.01); H01L 31/03044 (2013.01); H01L 31/0735 (2013.01); H01L 33/0025 (2013.01); H01L 33/0045 (2013.01); H01L 33/06 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01S 5/2031 (2013.01); H01S 5/320275 (2019.08); H01S 5/0014 (2013.01); H01S 5/2009 (2013.01); H01S 5/22 (2013.01); H01S 5/3063 (2013.01); H01S 5/3404 (2013.01); H01S 2304/04 (2013.01);
Abstract
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.