Portland, OR, United States of America

Kathryn Merced Kelchner

This inventor holds 11 USPTO granted patents. Top assignees: Lam Research Corporation, University of California. Active years: 2015-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kathryn Merced Kelchner. Retrieved from https://idiyas.com/inventor/kathryn-merced-kelchner

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.3

ph-index = 5

Forward Citations = 1,372(Granted Patents)


Location History:

  • Santa Barbara, CA (US) (2015 - 2018)
  • Portland, OR (US) (2015 - 2023)
  • Point Charlotte, FL (US) (2023)

Company Filing History:


Years Active: 2015-2023

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11 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Kathryn Merced Kelchner

Introduction

Kathryn Merced Kelchner is a prominent inventor based in Portland, Oregon, known for her significant contributions to the field of semiconductor technology. With a total of 11 patents under her name, Kelchner has established herself as a leading figure in innovation, particularly in the development of advanced materials and optoelectronic devices.

Latest Patents

Among her latest patents, one notable innovation is the "Conformal damage-free encapsulation of chalcogenide materials." This patent details methods and apparatuses for forming an encapsulation bilayer over chalcogenide materials on semiconductor substrates. The process involves creating a bilayer that includes a barrier layer directly on the chalcogenide material, which is deposited using pulsed plasma-enhanced chemical vapor deposition (PP-PECVD). Additionally, an encapsulation layer is formulated using plasma-enhanced atomic layer deposition (PEALD). The barrier layer utilizes a halogen-free silicon precursor, while the encapsulation layer incorporates a halogen-containing silicon precursor in combination with a hydrogen-free nitrogen-containing reactant.

Another significant patent by Kelchner includes the development of "Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than ± 15 degrees in the c-direction." This invention focuses on optoelectronic devices grown on a miscut of GaN, specifically designed to enhance the performance of semi-polar GaN crystal planes.

Career Highlights

Kelchner's impressive career includes tenures at reputable organizations, such as Lam Research Corporation and the University of California. Her work within these institutions has been fundamental in advancing semiconductor technology and developing innovative solutions for complex engineering challenges.

Collaborations

Throughout her career, Kathryn has collaborated with esteemed colleagues, including James Samuel Sims and Jon Henri. These collaborations have led to groundbreaking inventions and significant advancements in her field.

Conclusion

In summary, Kathryn Merced Kelchner stands out as a remarkable inventor with numerous patents that reflect her dedication to innovation in semiconductor technology. Her latest contributions demonstrate the potential for transformative advancements in materials and device design, securing her legacy as a prolific inventor in her domain.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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