The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Dec. 20, 2021
Lam Research Corporation, Fremont, CA (US);
James Samuel Sims, Tigard, OR (US);
Andrew John McKerrow, Lake Oswego, OR (US);
Meihua Shen, Fremont, CA (US);
Thorsten Lill, Kalaheo, HI (US);
Shane Tang, Camas, WA (US);
Kathryn Merced Kelchner, Point Charlotte, FL (US);
John Hoang, Fremont, CA (US);
Alexander Dulkin, Sunnyvale, CA (US);
Danna Qian, San Jose, CA (US);
Vikrant Rai, Sherwood, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.