Danna Qian

Title: Danna Qian: Innovator in Semiconductor Technology

Introduction

Danna Qian is a prominent inventor based in San Jose, CA (US). She has made significant contributions to the field of semiconductor technology, particularly in the encapsulation of chalcogenide materials. With a total of 2 patents, her work is paving the way for advancements in this critical area of research.

Latest Patents

Danna Qian's latest patents focus on the methods and apparatuses for forming an encapsulation bilayer over chalcogenide materials on semiconductor substrates. These methods involve creating a bilayer that includes a barrier layer directly on the chalcogenide material, which is deposited using pulsed plasma-enhanced chemical vapor deposition (PP-PECVD). An encapsulation layer is then formed over the barrier layer using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is created using a halogen-free silicon precursor, while the encapsulation layer is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

Career Highlights

Danna Qian is currently employed at Lam Research Corporation, where she continues to innovate and develop new technologies. Her expertise in semiconductor materials and processes has made her a valuable asset to her team and the industry as a whole.

Collaborations

Danna has collaborated with notable colleagues, including James Samuel Sims and Andrew John McKerrow. These partnerships have fostered a collaborative environment that enhances the innovation process.

Conclusion

Danna Qian's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading inventor in her field. Her work continues to influence advancements in encapsulation methods, showcasing her commitment to innovation and excellence.