Lake Oswego, OR, United States of America

Andrew John McKerrow

This inventor holds 16 USPTO granted patents and 5 published patent applications, primarily in Dielectric Film Deposition. Top assignees: Lam Research Corporation, Novellus Systems Incorporated. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Andrew John McKerrow. Retrieved from https://idiyas.com/inventor/andrew-john-mckerrow

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 100.0

Average Co-Inventor Count = 5.4

ph-index = 7

Forward Citations = 979(Granted Patents)


Company Filing History:


Years Active: 2014-2023

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Areas of Expertise:
Chalcogenide Materials
Dielectric Film
Wafer Temperature
Electrodeposition
Silicon Oxide
Ultraviolet Processing
ALD Films
Pore Sealing
Photosensitive Agents
Interfacial Reactions
Low-k Damage
Plasma Activation
16 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Andrew John McKerrow

Introduction

Andrew John McKerrow is a notable inventor based in Lake Oswego, Oregon. He holds an impressive portfolio of 16 patents, showcasing his significant contributions to the field of semiconductor technology. His work primarily focuses on methods and apparatuses that enhance the performance and reliability of chalcogenide materials.

Latest Patents

One of McKerrow's latest patents is titled "Conformal damage-free encapsulation of chalcogenide materials." This patent outlines methods for forming an encapsulation bilayer over chalcogenide material on a semiconductor substrate. The innovative methods involve creating a bilayer that includes a barrier layer directly on the chalcogenide material, which is deposited using pulsed plasma-enhanced chemical vapor deposition (PP-PECVD). An encapsulation layer is then formed over the barrier layer using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is created using a halogen-free silicon precursor, while the encapsulation layer is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

Career Highlights

Throughout his career, McKerrow has worked with prominent companies in the semiconductor industry, including Lam Research Corporation and Novellus Systems Incorporated. His experience in these organizations has allowed him to develop and refine his innovative techniques, contributing to advancements in semiconductor manufacturing.

Collaborations

Some of McKerrow's notable coworkers include Jon Henri and James Samuel Sims. Their collaboration has likely fostered an environment of innovation and creativity, further enhancing the development of new technologies in their field.

Conclusion

Andrew John McKerrow's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative methods for encapsulating chalcogenide materials demonstrate his commitment to advancing technology and improving manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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