The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Jan. 28, 2015
Applicant:

Novellus Systems, Inc., Fremont, CA (US);

Inventors:

Shankar Swaminathan, Beaverton, OR (US);

Jon Henri, West Linn, OR (US);

Dennis Hausmann, Lake Oswego, OR (US);

Pramod Subramonium, Beaverton, OR (US);

Mandyam Sriram, San Jose, CA (US);

Vishwanathan Rangarajan, Fremont, CA (US);

Kirthi Kattige, Portland, OR (US);

Bart van Schravendijk, Palo Alto, CA (US);

Andrew J. McKerrow, Lake Oswego, OR (US);

Assignee:

Novellus Systems, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01); H01J 37/32 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32412 (2013.01); C23C 16/045 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/402 (2013.01); C23C 16/4408 (2013.01); C23C 16/4554 (2013.01); C23C 16/45523 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01L 21/0217 (2013.01); H01L 21/02129 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/02348 (2013.01); H01L 21/67017 (2013.01); H01L 21/76831 (2013.01); H01L 21/76898 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3365 (2013.01);
Abstract

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.


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