Jon Henri

This inventor holds 56 USPTO granted patents and 15 published patent applications, primarily in Atomic Layer Deposition (CPC class H01L). Top assignees: Novellus Systems Incorporated, Lam Research Corporation, Lam Researh Corporation. Active years: 2002-2025.

USPTO Granted Patents = 56 (Patent Applications = 15)

% Patents Active = 82.1

Average Co-Inventor Count = 4.3

ph-index = 30

Forward Citations = 5,924(Granted Patents)

Forward Citations (Not Self Cited) = 5,631(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Linn, OR (US) (2003)
West Linn, OR (US) (2002 - 2024)

Company Filing History:

35 out of 993

Novellus Systems Incorporated

patents

19 out of 3,928

Lam Research Corporation

patents

1 out of 6

Lam Researh Corporation

patents

4. 1 out of 1

Novelius Systems, Inc.

patent

Years Active: 2002-2025

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Areas of Expertise:

Atomic Layer Deposition

Plasma Activated Films

Selective Growth

Critical Dimension Control

Etch-Stop Layer

Conformal Films

Sensitive Substrates

Chlorine-Free Films

Diffusion Barriers

Hardmask Thin Films

Wafer Temperature Control

Smooth Ashable Films

56 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12266535 - Mask encapsulation to prevent degradation during fabrication of high aspect ratio features (2025-04-01),

2. 12249514 - Carbon based depositions used for critical dimension control during high aspect ratio feature etches and for forming protective layers (2025-03-11),

3. 11869770 - Selective deposition of etch-stop layer for enhanced patterning (2024-01-09),

4. 11107683 - Selective growth of metal-containing hardmask thin films (2021-08-31),

5. 11094542 - Selective deposition of etch-stop layer for enhanced patterning (2021-08-17),

6. 11075127 - Suppressing interfacial reactions by varying the wafer temperature throughout deposition (2021-07-27),

7. 10804099 - Selective inhibition in atomic layer deposition of silicon-containing films (2020-10-13),

8. 10741458 - Methods for depositing films on sensitive substrates (2020-08-11),

9. 10643846 - Selective growth of metal-containing hardmask thin films (2020-05-05),

10. 10566194 - Selective deposition of etch-stop layer for enhanced patterning (2020-02-18),

11. 10347547 - Suppressing interfacial reactions by varying the wafer temperature throughout deposition (2019-07-09),

12. 10043655 - Plasma activated conformal dielectric film deposition (2018-08-07),

13. 10020188 - Method for depositing ALD films using halide-based precursors (2018-07-10),

14. 10008428 - Methods for depositing films on sensitive substrates (2018-06-26),

15. 9875891 - Selective inhibition in atomic layer deposition of silicon-containing films (2018-01-23),

Title: The Innovative Journey of Jon Henri

Introduction: Jon Henri, a visionary inventor based in West Linn, Oregon, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Jon Henri holds several patents in the field of renewable energy technologies, including a recent patent for a solar-powered water purification system that has the potential to provide clean drinking water in remote areas.

Career Highlights: With a background in mechanical engineering, Jon Henri has spent over two decades working in research and development, focusing on sustainable solutions for environmental challenges. His innovative approach has led to the development of cutting-edge technologies that have garnered international recognition.

Collaborations: Throughout his career, Jon Henri has collaborated with leading research institutions and universities to further his research and bring his inventions to market. His partnerships with industry experts have been instrumental in the success of his projects.

Conclusion: Jon Henri's passion for innovation and commitment to creating a more sustainable future have established him as a prominent figure in the world of inventors. His pioneering work continues to inspire the next generation of innovators to push the boundaries of what is possible.