The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Sep. 15, 2022
Lam Research Corporation, Fremont, CA (US);
Aaron Blake Miller, West Linn, OR (US);
Aaron Durbin, Portland, OR (US);
Jon Henri, West Linn, OR (US);
Easwar Srinivasan, Portland, OR (US);
Bradley Taylor Streng, Tigard, OR (US);
Awnish Gupta, Hillsboro, OR (US);
Bart J. Van Schravendijk, Palo Alto, CA (US);
Fengyan Wei, Meridian, ID (US);
Noah Elliot Baker, West Linn, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A remote plasma processing apparatus with an electrostatic chuck can deposit film on a semiconductor substrate by atomic layer deposition or chemical vapor deposition. The remote plasma processing apparatus can include a remote plasma source and a reaction chamber downstream from the remote plasma source. An RF power source can be configured to apply high RF power to the remote plasma source and heating elements can be configured to apply high temperatures to the electrostatic chuck. The semiconductor substrate can be dechucked from the electrostatic chuck using a declamping routine that alternates reversing polarities and reducing clamping voltages. In some embodiments, silicon nitride film can be conformally deposited by atomic layer deposition using a mixture of nitrogen, ammonia, and hydrogen gases as a source gas for remote plasma generation.