The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Mar. 16, 2020
Lam Research Corporation, Fremont, CA (US);
Jon Henri, West Linn, OR (US);
Karthik S. Colinjivadi, Dublin, CA (US);
Francis Sloan Roberts, Portland, OR (US);
Kapu Sirish Reddy, Portland, OR (US);
Samantha Siamhwa Tan, Fremont, CA (US);
Shih-Ked Lee, Fremont, CA (US);
Eric Hudson, Berkeley, CA (US);
Todd Shroeder, Sherwood, OR (US);
Jialing Yang, Sherwood, OR (US);
Huifeng Zheng, Beaverton, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.