The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
May. 07, 2018
Lam Research Corporation, Fremont, CA (US);
Nagraj Shankar, Tualatin, OR (US);
Kapu Sirish Reddy, Portland, OR (US);
Jon Henri, West Linn, OR (US);
Pengyi Zhang, Tigard, OR (US);
Elham Mohimi, Hillsboro, OR (US);
Bhavin Jariwala, Lake Oswego, OR (US);
Arpan Pravin Mahorowala, West Linn, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M) on top of a base material (M) of a substrate, Mdefining a pattern for etching Min areas where Mis not present above MThe method further includes operations for conformally capping the substrate with an oxide material (M) after adding Mand for gap filling the substrate with filling material Mafter the conformally capping. Further, a stop-etch material (M) is selectively grown on exposed surfaces of Mand not on surfaces of Mafter the gap filling. Additionally, the method includes operations for removing Mfrom the substrate after selectively growing Mand for etching the substrate after removing Mto transfer the pattern into MMadds etching protection to enable deeper etching into M