logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9077151 B1

PDFFull Text
Date of Patent:
Jul. 07, 2015

Filed:

Mar. 04, 2011

Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction

Applicants:

Po Shan Hsu, Arcadia, CA (US);

Kathryn M. Kelchner, Santa Barbara, CA (US);

Robert M. Farrell, Goleta, CA (US);

Daniel A. Haeger, Goleta, CA (US);

Hiroaki Ohta, Tokyo, JP;

Anurag Tyagi, Goleta, CA (US);

Shuji Nakamura, Santa Barbara, CA (US);

Steven P. Denbaars, Goleta, CA (US);

S. James Speck, Goleta, CA (US);

Inventors:

Po Shan Hsu, Arcadia, CA (US);

Kathryn M. Kelchner, Santa Barbara, CA (US);

Robert M. Farrell, Goleta, CA (US);

Daniel A. Haeger, Goleta, CA (US);

Hiroaki Ohta, Tokyo, JP;

Anurag Tyagi, Goleta, CA (US);

Shuji Nakamura, Santa Barbara, CA (US);

Steven P. DenBaars, Goleta, CA (US);

S. James Speck, Goleta, CA (US);

Assignee:

The Regents of the University of California, Oakland, CA (US);

Attorney:

Gates & Cooper LLP

Primary Examiner:

Tod T Van Roy

Assistant Examiner:

Delma R Forde

Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/32 (2006.01); B82Y 20/00 (2011.01); H01L 21/02 (2006.01); H01S 5/343 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/30 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3202 (2013.01); B82Y 20/00 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/0254 (2013.01); H01L 21/02609 (2013.01); H01S 5/0014 (2013.01); H01S 5/2009 (2013.01); H01S 5/22 (2013.01); H01S 5/3063 (2013.01); H01S 5/3404 (2013.01); H01S 5/34333 (2013.01); H01S 2304/04 (2013.01);
Abstract

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.

Find Patent Forward Citations

Hsu, Po. (2015). Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction (U.S. Patent No. 9077151). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9077151

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…