The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Mar. 04, 2011
Po Shan Hsu, Arcadia, CA (US);
Kathryn M. Kelchner, Santa Barbara, CA (US);
Robert M. Farrell, Goleta, CA (US);
Daniel A. Haeger, Goleta, CA (US);
Hiroaki Ohta, Tokyo, JP;
Anurag Tyagi, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. Denbaars, Goleta, CA (US);
S. James Speck, Goleta, CA (US);
Po Shan Hsu, Arcadia, CA (US);
Kathryn M. Kelchner, Santa Barbara, CA (US);
Robert M. Farrell, Goleta, CA (US);
Daniel A. Haeger, Goleta, CA (US);
Hiroaki Ohta, Tokyo, JP;
Anurag Tyagi, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
S. James Speck, Goleta, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.