The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Dec. 30, 2013
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

James S. Sims, Tigard, OR (US);

Jon Henri, West Linn, OR (US);

Kathryn M. Kelchner, Portland, OR (US);

Sathish Babu S. V. Janjam, Albany, NY (US);

Shane Tang, West Linn, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/515 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/67 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/515 (2013.01); C23C 16/045 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45523 (2013.01); C23C 16/4554 (2013.01); C23C 16/56 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/67017 (2013.01); H01L 21/6719 (2013.01); H01L 21/67201 (2013.01); H01L 21/76224 (2013.01); H01L 21/76829 (2013.01); H01L 21/02167 (2013.01); H01L 21/02175 (2013.01); H01L 21/31111 (2013.01);
Abstract

The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.


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