Albany, NY, United States of America

Sathish Babu S V Janjam


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 75(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: The Innovations of Sathish Babu S V Janjam

Introduction

Sathish Babu S V Janjam is an accomplished inventor based in Albany, NY (US). He has made significant contributions to the field of plasma technology, particularly in the area of atomic layer deposition. His innovative approaches have led to advancements that enhance the quality of films produced in various applications.

Latest Patents

Sathish holds a patent for "Plasma enhanced atomic layer deposition with pulsed plasma exposure." This patent focuses on processes that utilize pulsed plasmas during the deposition operation. Unlike conventional methods that use continuous wave plasmas, his approach results in films with high-quality sidewalls. This innovation addresses a common issue in traditional techniques, where sidewall quality is often compromised. The use of pulsed plasma leads to a more uniform film quality overall.

Career Highlights

Sathish is currently employed at Lam Research Corporation, a leading company in the semiconductor industry. His work there has allowed him to apply his expertise in plasma technology to real-world challenges. His contributions have been instrumental in advancing the capabilities of atomic layer deposition processes.

Collaborations

Sathish has collaborated with notable colleagues, including James Samuel Sims and Jon Henri. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Sathish Babu S V Janjam's work exemplifies the impact of innovative thinking in the field of plasma technology. His patent on pulsed plasma exposure represents a significant advancement in atomic layer deposition processes. Through his career at Lam Research Corporation, he continues to push the boundaries of what is possible in this exciting field.

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