The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Feb. 13, 2014
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Arash Pourhashemi, Santa Barbara, CA (US);
Robert M. Farrell, Goleta, CA (US);
Steven P. DenBaars, Goleta, CA (US);
James S. Speck, Santa Barbara, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/343 (2006.01); H01S 5/32 (2006.01); H01S 5/30 (2006.01); H01S 5/40 (2006.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01S 5/0217 (2013.01); H01S 5/3063 (2013.01); H01S 5/3202 (2013.01); H01S 5/4025 (2013.01);
Abstract
A high power blue-violet Ill-nitride semipolar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.