The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Feb. 06, 2017
The Regents of the University of California, Oakland, CA (US);
Asad J. Mughal, Goleta, CA (US);
Stacy J. Kowsz, Goleta, CA (US);
Robert M. Farrell, Goleta, CA (US);
Benjamin P. Yonkee, Goleta, CA (US);
Erin C. Young, Santa Barbara, CA (US);
Christopher D. Pynn, Goleta, CA (US);
Tal Margalith, Santa Barbara, CA (US);
James S. Speck, Santa Barbara, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.