The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Sep. 07, 2017
The Regents of the University of California, Oakland, CA (US);
Robert M. Farrell, Jr., Goleta, CA (US);
Troy J. Baker, Raleigh, NC (US);
Arpan Chakraborty, Chandler, AZ (US);
Benjamin A. Haskell, San Marcos, CA (US);
P. Morgan Pattison, Morgantown, WV (US);
Rajat Sharma, Singapore, SG;
Umesh K. Mishra, Montecito, CA (US);
Steven P. DenBaars, Goleta, CA (US);
James S. Speck, Santa Barbara, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Japan Science and Technology Agency, Kawaguchi, JP;
Abstract
A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.