IDiyas

For the Inventor, By the Inventor

Santa Barbara, CA, United States of America

Benjamin A Haskell

USPTO Granted Patents = 32 

 

Average Co-Inventor Count = 6.0

ph-index = 9

Forward Citations = 805(Granted Patents)


Location History:

  • Goleta, CA (US) (2007 - 2010)
  • Santa Barbara, CA (US) (2007 - 2014)
  • San Marcos, CA (US) (2016 - 2020)
  • Carlsbad, CA (US) (2014 - 2022)

Company Filing History:

goldMedal27 out of 15,458 
 
University of California
 patents
silverMedal20 out of 1,309 
 
Japan Science and Technology Agency
 patents
bronzeMedal5 out of 88 
 
Ostendo Technologies, Inc.
 patents
4. 1 out of 1,037 
 
Agency of Industrial Science and Technology
 patents
5. 1 out of 1 
 
Japan Science and Technology Center
 patent
where one patent can have more than one assignee

Years Active: 2007-2022

where 'Filed Patents' based on already Granted Patents

32 patents (USPTO):
1. 11322652 - Methods for producing composite GaN nanocolumns and light emitting structures made from the methods (2022-05-03),
2. 10529892 - Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices (2020-01-07),
3. 10373830 - Apparatus and methods to remove unbonded areas within bonded substrates using localized electromagnetic wave annealing (2019-08-06),
4. 9978582 - Methods for improving wafer planarity and bonded wafer assemblies made from the methods (2018-05-22),
5. 9793435 - Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices (2017-10-17),
6. 9660135 - Enhanced performance active pixel array and epitaxial growth method for achieving the same (2017-05-23),
7. 9443727 - Semi-polar III-nitride films and materials and method for making the same (2016-09-13),
8. 9231376 - Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices (2016-01-05),
9. 8882935 - Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition (2014-11-11),
10. 8686466 - Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices (2014-04-01),
11. 8524012 - Technique for the growth of planar semi-polar gallium nitride (2013-09-03),
12. 8502246 - Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition (2013-08-06),
13. 8450192 - Growth of planar, non-polar, group-III nitride films (2013-05-28),
14. 8405128 - Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition (2013-03-26),
15. 8368179 - Miscut semipolar optoelectronic device (2013-02-05),

Title: The Innovative Journey of Benjamin A Haskell

Introduction: Benjamin A Haskell, a visionary inventor based in Santa Barbara, CA, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Benjamin A Haskell's latest patents include cutting-edge technologies in the fields of renewable energy, artificial intelligence, and sustainable agriculture, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Benjamin A Haskell has established himself as a pioneer in the tech industry, with a strong focus on creating solutions that address pressing global challenges. His innovative spirit and dedication to excellence have earned him recognition as a leading inventor in the region.

Collaborations: Throughout his career, Benjamin A Haskell has collaborated with top research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has led to the successful development and commercialization of cutting-edge technologies.

Conclusion: In conclusion, Benjamin A Haskell's passion for innovation, coupled with his technical expertise, has positioned him as a trailblazer in the world of technology. His relentless pursuit of excellence and commitment to creating a positive impact on society continue to inspire the next generation of inventors and entrepreneurs.

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