The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Feb. 12, 2009
Arpan Chakraborty, Goleta, CA (US);
Benjamin A. Haskell, Santa Barbara, CA (US);
Stacia Keller, Santa Barbara, CA (US);
James S. Speck, Goleta, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Umesh K. Mishra, Montecito, CA (US);
Arpan Chakraborty, Goleta, CA (US);
Benjamin A. Haskell, Santa Barbara, CA (US);
Stacia Keller, Santa Barbara, CA (US);
James S. Speck, Goleta, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Umesh K. Mishra, Montecito, CA (US);
The Regents of the University of California, Oakland, CA (US);
The Japan Science and Technology Agency, Kawaguchi, Saitama Prefecture, JP;
Abstract
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.