Robert Alan May

This inventor holds 89 USPTO granted patents and 71 published patent applications and 4 EPO patents, primarily in High Density Interconnects (CPC class H01L23-5381). Top assignees: Intel Corporation, Tahoe Research, Ltd., Other. Active years: 1998-2026.

USPTO Granted Patents = 89 (Patent Applications = 71)

% Patents Active = 93.3

EPO Patents = 4 (Patent Applications = 11)

Average Co-Inventor Count = 4.9

ph-index = 5

Forward Citations = 174(Granted Patents)

Forward Citations (Not Self Cited) = 125(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Salt Lake City, UT (US) (1998)
Daly City, CA (US) (2000)
Chandler, AZ (US) (2017 - 2024)

Company Filing History:

1 out of 834,307

Other

patents

where one patent can have more than one assignee

Years Active: 1998-2026

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Areas of Expertise:

High Density Interconnects

EMIB Patch

Multi-Chip Package

Lithographic Cavity Formation

Embedded Multi-Die

Microelectronic Structures

Die Interconnect Substrate

Photonic Packaging

Through-Mold Vias

Conductive Pathways

Subtractive Etch Resolution

Electromigration Resistant

89 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12733107 - Enhanced subtractive etch anisotropy using etch rate gradient (2026-09-08),

2. 12677682 - Integrated circuit package with multi-layered metallization lines including a copper layer on a non-copper seed layer (2026-07-07),

3. 12628676 - Device and method of very high density routing used with embedded multi-die interconnect bridge (2026-05-12),

4. 12481108 - Faraday rotator interconnect as a through-via configuration in a patch architecture (2025-11-25),

5. 12456705 - First layer interconnect first on carrier approach for EMIB patch (2025-10-28),

6. 12354992 - First layer interconnect first on carrier approach for EMIB patch (2025-07-08),

7. 12354963 - Lithographic cavity formation to enable EMIB bump pitch scaling (2025-07-08),

8. 12334443 - Lithographic cavity formation to enable EMIB bump pitch scaling (2025-06-17),

9. 12300613 - Die interconnect substrate, an electrical device and a method for forming a die interconnect substrate (2025-05-13),

10. 12253722 - Magneto-optical Kerr effect interconnects for photonic packaging (2025-03-18),

11. 12218071 - Panel level packaging for multi-die products interconnected with very high density (VHD) interconnect layers (2025-02-04),

12. 12218069 - Multi-chip package with high density interconnects (2025-02-04),

13. 12176292 - Microelectronic component having molded regions with through-mold vias (2024-12-24),

14. 12176223 - Integrated circuit package supports (2024-12-24),

15. 12148703 - EMIB patch on glass laminate substrate (2024-11-19),

Title: The Innovative Journey of Robert Alan May

Introduction: Robert Alan May, a talented inventor based in Chandler, Arizona, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Robert Alan May holds several patents in various technological domains, including artificial intelligence, renewable energy, and medical devices. His most recent patent focuses on a cutting-edge AI algorithm for predictive maintenance in industrial machinery.

Career Highlights: Throughout his illustrious career, Robert Alan May has been recognized for his innovative spirit and problem-solving skills. He has received multiple awards for his groundbreaking inventions, showcasing his dedication to pushing the boundaries of technology.

Collaborations: Robert Alan May has collaborated with leading tech companies and research institutions to bring his inventions to life. His partnerships have been instrumental in turning his visionary ideas into tangible products that have revolutionized their respective industries.

Conclusion: In conclusion, Robert Alan May stands as a beacon of innovation in the technological landscape, continually striving to create solutions that make a positive impact on society. His relentless pursuit of excellence and creativity make him a true pioneer in the world of inventions.