Rhinebeck, NY, United States of America

Ricky S Amos


Average Co-Inventor Count = 5.8

ph-index = 8

Forward Citations = 368(Granted Patents)


Location History:

  • Apex, NC (US) (2002)
  • Rhinebeck, NY (US) (2004 - 2013)

Company Filing History:


Years Active: 2002-2013

where 'Filed Patents' based on already Granted Patents

15 patents (USPTO):

Title: Ricky S Amos: Innovator in Semiconductor Technology

Introduction

Ricky S Amos is a prominent inventor based in Rhinebeck, NY (US), known for his significant contributions to semiconductor technology. With a total of 15 patents to his name, he has made remarkable advancements in the field, particularly in the design and fabrication of semiconductor structures.

Latest Patents

Among his latest patents is a field effect device with a reduced thickness gate. This innovative semiconductor structure is designed to achieve reduced gate capacitance by thinning the gate electrode. The process involves forming a spacer layer adjacent to the gate electrode, which is then thinned to enhance the horizontal width necessary for locating an intrinsic source/drain relative to an extension region. Additionally, the reduced thickness gate electrode may be fully silicided to decrease gate resistance, while a raised source/drain layer is positioned above the intrinsic source/drain region, ensuring optimal performance.

Another notable patent is the structure and method to form multilayer embedded stressors. This invention features a graded dopant profile for use in semiconductor structures, inducing strain on the device channel region. The multilayer embedded stressor consists of a first conformal epi semiconductor layer that is either undoped or lightly doped, paired with a second highly doped epi semiconductor layer. This innovative design achieves a balance between stress proximity and short channel effects, effectively minimizing defects typically generated during the formation of deep source/drain regions.

Career Highlights

Ricky S Amos is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced semiconductor devices that enhance performance and efficiency.

Collaborations

Throughout his career, Ricky has collaborated with notable colleagues, including Cyril Cabral, Jr. and Diane Catherine Boyd. These partnerships have contributed to the successful development of his innovative patents and advancements in the semiconductor field.

Conclusion

Ricky S Amos stands out as a leading inventor in semiconductor technology, with a strong portfolio of patents that reflect his expertise and innovative spirit. His contributions continue to shape the future of the industry, making a lasting impact on technology.

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