The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2009

Filed:

Jan. 09, 2006
Applicants:

Ricky S. Amos, Rhinebeck, NY (US);

Bryant C. Colwill, Staatsburg, NY (US);

Kevin E. Mello, Fishkill, NY (US);

Inventors:

Ricky S. Amos, Rhinebeck, NY (US);

Bryant C. Colwill, Staatsburg, NY (US);

Kevin E. Mello, Fishkill, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments herein present a method for a feed forward silicide control scheme based on spacer height controlling pre-clean time. The method forms field effect transistor gates over a substrate and then forms spacers on the gates. Next, the method measures the spacers using an atomic force microscope to determine a measured spacer height. The method then conducts a pre-cleaning etch, wherein a duration of the pre-cleaning is adjusted according to the measured spacer height. If the measured spacer height is below a predetermined amount, the duration of the pre-cleaning is reduced; and, if the measured spacer height is above a predetermined amount, the duration of the pre-cleaning is increased.


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