The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Jan. 29, 1999
Ricky S. Amos, Apex, NC (US);
Arne W. Ballantine, South Burlington, VT (US);
Gregory Bazan, Winooski, VT (US);
Bomy A. Chen, Stormville, NY (US);
Douglas D. Coolbaugh, Essex Junction, VT (US);
Ramachandra Divakaruni, Middletown, NY (US);
Heidi L. Greer, Essex Junction, VT (US);
Herbert L. Ho, New Windsor, NY (US);
Joseph F. Kudlacik, Milton, VT (US);
Bernard P. Leroy, Suresnes, FR;
Paul C. Parries, Wappingers Falls, NY (US);
Gary L. Patton, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a thermally stable ohmic contact structure that includes a region of monocrystalline semiconductor and a region of polycrystalline semiconductor. At least one region of dielectric material is formed between at least a portion of the region of monocrystalline semiconductor and the region of polycrystalline semiconductor, thereby controlling grain growth of the polycrystalline semiconductor.