Gary L Patton

Title: Gary L. Patton: Innovator in Semiconductor Technology

Introduction

Gary L. Patton is a notable inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on enhancing the performance and stability of electrical contact structures and transistors.

Latest Patents

Among his latest patents is a method for forming a thermally stable polycrystal to single crystal electrical contact structure. This innovative method involves creating a thermally stable ohmic contact structure that includes both monocrystalline and polycrystalline semiconductor regions. A dielectric material is strategically placed between these regions to control grain growth in the polycrystalline semiconductor. Another significant patent is for a graded bandgap single-crystal emitter heterojunction bipolar transistor. This design features a single-crystal emitter that minimizes charge storage while maintaining acceptable current gain. The transistor includes a collector region, a base region, and a single-crystal emitter region, with a graded profile of germanium added to optimize performance.

Career Highlights

Gary L. Patton is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His innovative approaches have led to advancements that are crucial for the development of modern electronic devices.

Collaborations

Throughout his career, Gary has collaborated with esteemed colleagues such as David Louis Harame and Johannes M. Stork. These partnerships have fostered a creative environment that has resulted in groundbreaking inventions.

Conclusion

Gary L. Patton's contributions to semiconductor technology exemplify the spirit of innovation. His patents reflect a deep understanding of materials and engineering principles, making him a key figure in the advancement of electrical contact structures and transistors.